黃國威 Guo-Wei Huang

計畫主持人 / 資深研究員
Principal Investigator, Senior Research Fellow

國立交通大學電子工程學系 合聘教授
Joint Professor, Dept. of Electronics Engineering, NCTU


TEL:+886-3-5726100 #7718
FAX:+886-3-5713403
E-mail:gwhuang@narlabs.org.tw; gwhuang@nctu.edu.tw

學歷 Education

國立交通大學電子研究所博士
Ph.D., Electronics Engineering, National Chiao Tung University

國立交通大學電子工程學系 學士
B.S., Electronics Engineering , National Chiao Tung University

經歷 Experience

2011.8 -

國立交通大學電子工程學系 合聘教授
Joint Professor, Dept. of Electronics Engineering, NCTU

2008.8 – 2011.7

國立交通大學電子工程學系 合聘副教授
Joint Associate Professor, Dept. of Electronics Engineering, NCTU

2001.8 – 2013.7

中華民國微波學會 第八屆理事
Director, Chinese Microwave Association

2018.3 –

國家奈米元件實驗室 資深研究員
Senior Research Fellow, NDL

2018.2 –

國家奈米元件實驗室 計畫主持人
Principal Investigator, NDL

2004.1 – 2018.2

國家奈米元件實驗室 研究員
Research Fellow, NDL

2014.8 – 2018.1

國家奈米元件實驗室 副主任
Deputy Director General, NDL

2000.7 – 2017.4

國家奈米元件實驗室 高頻技術組組長
Division Director, High-Frequency Technology Division, NDL

1997.10 –2003.12

國家奈米元件實驗室 副研究員
Associate Researcher. NDL

研究與技術專長 Research Interests and Expertise

CMOS / BiCMOS / SiGe BiCMOS RFIC Technologies
Characterization and Modeling Techniques of High Frequency Devices
RFIC/MMIC Characterization and Verification

Journal Papers
  1. B.Y. Chen, K.M. Chen, C.S. Chiu, G.W. Huang, and E.Y. Chang, “High-frequency performances of superjunction laterally diffused metal–oxide–semiconductor transistors for RF power applications,“ Japanese Journal of Applied Physics (JJAP), vol. 55, no.4S, pp.04ER09-1-4, Apr. 2016.
  2. K.M. Chen, B.Y. Chen, C.S. Chiu, G.W. Huang, C.H. Chen, H.C. Lin, T.Y. Huang, M.Y. Chen, Y.C. Yang, B. Jaw, and K.L. Wang, “Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact,” IEEE Electron Device Lett., vol. 34, no. 9, pp.1085-1087, Sep. 2013.
  3. K.M. Chen, T.I Tsai, T.Y. Lin, H.C. Lin, T.S. Chao, G.W. Huang, and T.Y. Huang, “Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors,” IEEE Electron Device Lett., vol. 34, no. 8, pp.1020-1022, Aug. 2013.
  4. H.D. Yen, J.S. Yuan, R.L. Wang, G.W. Huang, W.K. Yeh, F.S. Huang, “RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments”, Microelectronics Reliability, vol.52, no.11, pp. 2655-2659, Nov. 2012.
  5. K.M. Chen, G.W. Huang, B.Y. Chen, C.S. Chiu, C.H. Hsiao, W.S. Liao, M.Y. Chen, Y.C. Yang, K.L. Wang, and C.W. Liu,” LDMOS Transistor High-Frequency Performance Enhancements by Strain,” IEEE Electron Device Lett., vol. 33, no. 4, pp.471-473, Apr. 2012.
  6. S.C. Wang, P. Su, K.M. Chen, B.Y. Chen, and G.W. Huang, ”Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicron Bulk and SOI MOSFETs,” IEEE Trans. Electron Devices, vol.59, no. 3, pp. 551-556, Mar. 2012.
  7. C.S. Chiu, K.M. Chen, G.W. Huang, M.I. Chen, Y.C. Yang, and K.L. Wang, “Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout Structure,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 3, pp638-643, Mar. 2011.
  8. S.C. Wang, P. Su, K.M. Chen, B.Y. Chen, G.W. Huang, C.C. Hung, S.Y. Huang, C.W. Fan, C.Y. Tzeng, and S. Chou, “Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs,” IEEE Trans. Electron Devices, vol. 58, no. 3, pp. 895-900, Mar. 2011.
  9. Y.T. Chen, K.M. Chen, C.L. Lin, W.K. Yeh, G.W. Huang, C.M. Lai, Y.W. Chen, C.H. Hsu, and F.S. Huang, “Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-κ Dielectric nMOSFETs,” IEEE Trans. Electron Devices, vol.58, no. 3, pp. 812-818, Mar. 2011.
  10. Y.T. Chen, K.M. Chen, W.S. Liao, G.W. Huang, and F.S. Huang, “ Impact of highly compressive interlayer-dielectric-SiNx stressing layer on 1/f noise and reliability of SiGe-channel pMOSFETs,” IEEE Electron Device Lett., vol. 31, no. 12, pp.1368-1370, Dec. 2010.
  11. S.C. Wang, P. Su, K.M. Chen, K.H Liao, B.Y. Chen, S.Y. Huang, C.C. Hung, and G.W. Huang, “Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs,” IEEE Trans. Microwave Theory and Techniques, vol. 58, no. 9, pp. 2319-2325, Sep. 2010.
  12. S.C. Wang, P. Su, K.M. Chen, K.H. Liao, B.Y. Chen, S.Y. Huang, C.C. Hung, and G.W. Huang, “Comprehensive Noise Characterization and Modeling for 65nm MOSFETs for Millimeter-Wave Applications”, IEEE Trans. Microwave Theory and Techniques, vol. 58, no. 4, pp.740-746, Apr. 2010.
  13. W.L. Chen, S.F. Chang, K.M. Chen, G.W. Huang, and J.C. Chang, “Temperature Effect on Ku-Band Current-Reused Common-Gate LNA in 0.13-μm CMOS Technology”, IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 9, pp.2131-2138, Sep. 2009.
  14. C.S. Chiu, C.C. Chang, C.L. Ku, K.M. Peng, E. S. Jeng, W.L. Chen, G.W. Huang, and L.K. Wu, “Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers”, Jpn. J. Appl. Phys., vol. 48, no. 4, pp. 04C182, Apr. 2009.
  15. Y.T. Chen, K.M. Chen, W.S. Liao, G.W. Huang, and F.S. Huang, “Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiNx Stressing Layer,” Jpn. J. Appl. Phys., vol. 48, no. 4, pp. 04C042, Apr. 2009.
  16. S.C. Wang, P. Su, K.M. Chen, S.Y. Huang, C.C Hung, and G.W. Huang, “Radio-Frequency Small-Signal and Noise Modeling for Silicon-On-Insulator Dynamic Threshold Voltage MOSFETs”, Jpn. J. Appl. Phys., vol. 48, no. 4, pp. 04C041, Apr. 2009.
  17. S.C. Wang, P. Su, K.M. Chen, C.T. Lin, V. Liang, and G.W. Huang, “Temperature Dependence of High Frequency Noise Behaviors for RF MOSFETs”, IEEE Microwave and Wireless Components Letters, vol.18, no.8, pp. 530-532, Aug. 2008.
  18. H.H. Hu, K.M. Chen, G.W. Huang, M.Y. Chen, E. Cheng, Y.C. Yang, and C.Y. Chang, “Temperature-Dependent Capacitance Characteristics of RF LDMOS Transistors With Different Layout Structures,” IEEE Electron Device Letters, vol. 29, no. 7, pp. 784-787, Jul. 2008.
  19. H.H. Hu, K.M. Chen, G.W. Huang, A. Chien, E. Cheng, Y.C. Yang, and C.Y. Chang, “Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors”, Jpn. J. Appl. Phys., vol. 47, No. 4, pp. 2650-2655, Apr. 2008.
  20. S.C. Wang, P. Su, K.M. Chen, C.T. Lin, V. Liang, and G.W. Huang, “Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect”, Jpn. J. Appl. Phys., vol. 47, No. 4, pp. 2087-2091, Apr. 2008.
  21. S.Y. Huang, K.M. Chen, G.W. Huang, C.C. Hung, W.S. Liao, and C.Y. Chang, “Electrical Stress Effect on RF Power Characteristics of SiGe Heterojunction Bipolar Transistors”, Microelectronics Reliability, vol.48, no.2, pp. 193-199, Feb. 2008.
  22. W.L. Chen, S.F. Chang, G.W. Huang, Y.S. Jean and T.H. Yeh, “A Ku-band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology”, IEEE Microwave and Wireless Components Letters, vol. 17, no. 10, pp. 718-720, Oct. 2007.
  23. S.C. Wang, P. Su, K.M. Chen, C.T. Lin, V. Liang, and G.W. Huang, “On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs”, IEEE Microwave and Wireless Components Letters, vol. 17, no. 5, pp. 364-366, May 2007.
  24. H.H. Hu, K.M. Chen, G.W. Huang, C.Y. Chang, Y.C. Lu, Y.C. Yang, and E. Cheng, “Characterization of RF Lateral-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors with Different Layout Structures,” Jpn. J. Appl. Phys., vol. 46, No. 4B, pp. 2032-2036, Apr. 2007.
  25. W.L. Chen, G.W. Huang, and S.F. Chang, “Broadband CMOS Mixer Cell for UWB Applications”, Microwave and Optical Technology Letters, vol.49, No.1, pp.127-128, Jan. 2007.
  26. H.Y. Chen, K.M. Chen, G.W. Huang, and C.Y. Chang, “Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction Method,” IEEE Transactions on Electron Devices, vol.53, no. 9, pp. 2287-2295, Sep. 2006.
  27. H.Y. Chen, K.M. Chen, G.W. Huang, and C.Y. Chang, “An Improved Parameter Extraction Method of SiGe HBTs’ Substrate Network,” IEEE Microwave and Wireless Components Letters, vol. 16, no. 6, pp. 321-323, Jun. 2006.
  28. M.H. Cho, G.W. Huang, Y.H. Wang, L.K. Wu, “A Scalable Noise De-Embedding Technique for On-Wafer Microwave Device Characterization”, IEEE Microwave and Wireless Components Letters, vol.15, no.10, pp.649-651, Oct. 2005.
  29. M.H. Cho, G.W. Huang, L.K. Wu, C.S. Chiu, Y.H. Wang, K.M. Chen, H.C. Tseng, and T.L. Hsu, “A Shield-Based Three-Port De-Embedding Method for Microwave On-Wafer Characterization of Deep-Submicrometer Silicon MOSFETs”, IEEE Trans. Microwave Theory and Techniques, vol.53, no.9, pp.2926-2934, Sep. 2005.
  30. H.Y. Chen, G.W. Huang, K.M. Chen, and C.Y. Chang, “Noise Parameters Computation of Microwave Devices Using Genetic Algorithms, ” IEICE Transactions on Electronics, vol.E88-C, no.7, pp.1382-1384, Jul. 2005.
  31. K.M. Chen, A.S. Peng, G.W. Huang, H.Y. Chen, S.Y. Huang, C.Y. Chang, H.C. Tseng, T.L. Hsu, and V. Liang, “Linearity and Power Characteristics of SiGe HBTs at High Temperatures for RF Applications,” IEEE Transactions on Electron Devices, vol. 52, pp. 1452-1458, Jul. 2005.
  32. H.Y. Chen, K.M. Chen, G.W. Huang, and C.Y. Chang, “A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit,” IEICE Transaction on Electronics, vol.E88-C, no.6, pp.1133-1141, Jun. 2005.
  33. K.M. Chen, H.H. Hu, G.W. Huang, and C.Y. Chang, “Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress,” Jpn. J. Appl. Phys., vol. 44, no. 6A, pp. 3832-3835, Jun. 2005.
  34. S.Y. Huang, K.M. Chen, G.W. Huang, V. Liang, H.C. Tseng, T.L. Hsu, and C.Y. Chang, “Hot-Carrier Induced Degradations on RF Power Characteristics of SiGe Heterojunction Bipolar Transistors,” IEEE Transactions on Device and Materials Reliability, vol.5, no.2, pp.183-189, Jun. 2005.
  35. S.D. Wu, G.W. Huang, K.M. Chen, C.Y. Chang, H.C. Tseng, and T.L. Hsu, “Extraction of Substrate Parameters for RF MOSFET’s Based on Four-Port Measurement,” IEEE Microwave and Wireless Components Letters, vol.15, no.6, pp.437-439, Jun. 2005.
  36. S.D. Wu, G.W. Huang, K.M. Chen, H.C. Tseng, T.L. Hsu, and C.Y. Chang, “RF MOSFET Characterization by Four-Port Measurement,” IEICE Transaction on Electronics, vol.E88-C, no.5, pp.851-856, May 2005.
  37. M.H. Cho, G.W. Huang, C.S. Chiu, K.M. Chen, A.S. Peng, and Y.M. Tseng, “A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement,” IEICE Transaction on Electronics, vol.E88-C, no.5, pp.845-850, May 2005.
  38. M.H. Cho, K.M. Chen, G.W. Huang, and C.S. Chiu, “Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits,” Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2166-2170, Apr. 2005.
  39. H.Y. Chen, K.M. Chen, G.W. Huang, C.Y. Chang, and T.Y. Huang, “An Improved Approach for Small-Signal Equivalent-Circuit Parameter Determination of InGaP/GaAs HBT,” Microwave and Optical Technology Letters, vol.44, no.5, pp. 456-460, Mar. 2005.
  40. S.Y. Huang, K.M. Chen, G.W. Huang, H.C. Tseng, T.L. Hsu, C.Y. Chang, and T.Y. Huang, “Hot-Carrier Effects on Power Characteristics of SiGe HBTs”, IEEE Electron Device Letters, vol. 25, no.6, pp. 393-395, Jun. 2004.
  41. S.Y. Wen, G.W. Huang, and K.M. Chen, “An accurate and low-cost method for on-wafer LNA noise figure measurement,” IEICE Transaction on Electronics, vol. E87-C, no. 5, pp. 742-748, May 2004.
  42. H.Y. Chen, K.M. Chen, G.W. Huang, C.Y. Chang, and T.Y. Huang, “A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement,” IEICE Transaction on Electronics, vol. E87-C, no. 5, pp. 726-732, May 2004.
  43. K.M. Chen, G.W. Huang, L.H. Chang, H.C. Tseng, and T.L. Hsu, “High-frequency characteristics of SiGe heterojunction bipolar transistors under pulsed-mode operation,” IEICE Transaction on Electronics, vol. E87-C, no. 5, pp. 720-725, May 2004.
  44. K.M. Chen, H.H. Hu, G.W. Huang, W.K. Yeh, and C.Y. Chang, “Low-frequency noise in partially-depleted SOI MOSFETs operating from linear region to saturation region at various temperatures,” Jpn. J. Appl. Phy., Part 1, vol. 43, no. 4B, pp. 2188-2189, Apr. 2004.
  45. K.M. Chen, G.W. Huang, S.C. Wang, W.K. Yeh, Y.K. Fang, and F.L. Yang, “Characterization and Modeling of SOI Varactors at Various Temperatures,” IEEE Transactions on Electron Devices, vol. 51, no. 3, pp. 427-433, Mar. 2004.
  46. K.M. Chen, G.W. Huang, D.Y. Chiu, H.J. Huang, and C.Y. Chang, “Analysis of Low-frequency Noise in Boron-doped Polycrystalline Silicon-Germanium Resistors”, Appl. Phys. Lett., vol.81, no.14, pp.2578-2580, Sep. 2002.
  47. C.Y. Su, L.P. Chen, S.J. Chang, , B.M. Tseng, D.C. Lin, G.W. Huang, Y.P. Ho, H.Y. Lee, J.F. Kuan, W.Y. Wen, P. Liou, C.L. Chen, L.Y. Leu, K.A. Wen, and C.Y. Chang, “A Macro Model of Silicon Spiral Inductor”, Solid-State Electronic. vol.46, no.5, p. 759-767, May 2002.
  48. H. T. Lue, T. Y. Tseng, and G. W. Huang, “A Novel Method to Characterize the Dielectric and Interfacial Properties of Metal-Insulator-Semiconductor Structures by Microwave Measurement”, J. Appl. Phy. vol.91, no.8, pp.5275-5282, Apr. 2002.
  49. C.Y. Su, L.P. Chen, S.J. Chang, G.W. Huang, D.C. Lin, Y.P. Ho, B.M. Tseng, H.Y. Lee, J.F. Kuan, Y.M. Deng, K.A. Wen, and C.Y. Chang, “A Automatic Macro Program for Radio Frequency MOSFETs Characteristics Analysis”, Microwave Journal, vol.44, no.10, p. 99-108, Oct. 2001.
  50. K.M. Chen, H.J. Huang, C.Y. Chang, T.Y. Huang, G.W. Huang, and L.P. Chen, “The Reaction of Co and Si1-xGex for MOSFET with Poly- Si1-xGex Gate,” Materials Chemistry and Physics, vol.69, p.84-88, Mar. 2001.
  51. C.Y. Su, L.P. Chen, S.J. Chang, G.W. Huang, Y.P. Ho, B.M. Tseng, D.C. Lin, H.Y. Lee, J.F. Kuan, Y.M. Deng, C.L. Chen, L.Y. Len, K.A. Wen, and C.Y. Chang, “Effect of Coplanar Probe Pad Design on the Noise Figures of 0.35m MOSFETs”, Electronics Letters, vol. 36, no.15, pp.1280-1281, Jul. 2000.
  52. L.P Chen, Y.C. Chan, S.J. Chang, G.W. Huang, and C.Y. Chang, “Direct Oxidation of Si1-xGex Layers using Vacuum-Ultra-Violet Light Radiation in Oxygen”, J. J. Appl. Phys., 37(2A), pp.L122-L124, Feb. 1998.

International Conference Papers
  1. B.Y. Chen, K.M. Chen, C.S. Chiu, G.W. Huang, H.C. Chen, C.C. Chen, F.K. Hsueh, M.C. Chen, and E. Y. Chang, “Drain-Extended FinFET Technology for RF Power Applications,” in 2016 International Conference on Solid State Devices and Materials (SSDM 2016), Tsukuba, Japan, Sep. 2016.
  2. C.S. Yang, T.Y. Lin, D.C. Chang, and G.W. Huang, ”Gap-coupled miniaturized antenna on IPD process for WLAN tablet computer,” in 2016 International Symposium on Antennas and Propagation, Okinawa, Japan, Oct. 2016.
  3. B.Y. Chen, K.M. Chen, G.W. Huang, and E.Y. Chang, “RF Characteristics of LDMOS Transistors with Superjunction Structures,” in 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, Sep. 2015.
  4. Y.S.J. Shiao, J.Y. Liao, and G.W. Huang, “On-wafer probes for submillimeter-wave on-chip antennas,” in 2015 IEEE MTT-S International Microwave Symposium, Phoenix, U.S.A., May 2015.
  5. Y.S.J. Shiao, G.W. Huang and, T.H. Chiueh, “A 4 GHz Cryogenic Amplifier in 0.18 μm General Purpose BiCMOS Technology,” in 2014 Asia Pacific Microwave Conference, Sendai, Japan, Nov. 2014.
  6. C.S. Chiu, C.W. Chuang, B.Y. Chen, W.D. Liu, G.W. Huang, Y.C. Lin, Y.S. Chiu and Edward Y. Chang, “On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters,” in 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, Sep. 2013.
  7. W.L. Chen, Y.S. Jerry Shiao, H.D. Yen, G.W. Huang, H.H. Hsieh, C.P. Jou and F.L. Hsueh,” A 53.6 GHz Direct Injection-locked Frequency Divider with a 72% Locking Range in 65 nm CMOS Technology,” in 2013 IEEE MTT-S International Microwave Symposium, Seattle, U.S.A., Jun. 2013.
  8. K.M. Chen, B.Y. Chen, H.W. Chen, C.S. Chiu, G.W. Huang, C.H. Chang, and H.H. Hu, ” Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors,” in 2013 IEEE RFIC Symposium, Seattle, U.S.A., Jun. 2013.
  9. Y.S. Shiao, G.W. Huang, C.W. Chuang, H.H. Hsieh, C.P. Jou, and F.L. Hsueh,”A 100-GHz Varactorless CMOS VCO Using Source Degeneration,” in 2012 IEEE MTT-S International Microwave Symposium, Montreal, Canada, Jun. 2012.
  10. K.M. Chen, Z.W. Mou, H.C. Kuo, C.S. Chiu, B.Y. Chen, W.D. Liu, M.Y. Chen, Y.C. Yang, K.L. Wang, and G.W. Huang, “Hot-Carrier Effects on High-Frequency Characteristics of RF LDMOS Transistors,” in 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Nagoya, Japan, Sep. 2011.
  11. C.S. Chiu, S.Y. Lin, B.Y. Chen, K.M. Chen, and G.W. Huang, “Nonlinear Behavior Characterization of RF Active Devices Using Impedance-dependence X-parameters”, in 2010 Asia Pacific Microwave Conference, Yokohama, Japan, Dec. 2010.
  12. C.S. Chiu, K.M. Chen, G.W. Huang, S.Y. Lin, B.Y. Chen, C.C. Hung, S.Y. Huang, C.W. Fan, C.Y. Tzeng, and S. Chou, “Power Improvement for 65nm nMOSFET with High-Tensile CESL and Fast Nonlinear Behavior Modeling”, in 2010 IEEE RFIC Symposium, Anaheim, California, U.S.A., May 2010.
  13. S.C. Wang, P. Su, K.M. Chen, S.Y. Huang, C.C. Hung, and G.W. Huang, “Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET,” in 2009 European Microwave Integrated Circuits Conference, Rome, Italy, Sep. 2009.
  14. C.S. Chiu, K.M. Chen, G.W. Huang, C.H. Hsiao, K.H. Liao, W.L. Chen, S.C. Wang, M.Y. Chen, Y.C. Yang, K.L. Wang, and L.K. Wu, “Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion Model”, in 2009 IEEE MTT-S International Microwave Symposium, Boston, Massachusetts, U.S.A., Jun. 2009.
  15. G.W. Huang, K.M. Chen, H.Y. Chen, C.H. Huang, and C.Y. Chang, ”Impact of Body Bias on the High Frequency Performance of Partially Depleted SOI MOSFETs”, in 2008 Asia Pacific Microwave Conference, Hong Kong, China, Dec. 2008.
  16. K.M. Chen, H.Y. Chen, G.W. Huang, W.S. Liao, and C.Y. Chang, “RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Method” , in 2008 Asia Pacific Microwave Conference, Hong Kong, China, Dec. 2008.
  17. C.S. Chiu, W.L. Chen, K.H. Liao, B.Y. Chen, Y.M. Teng, G.W. Huang, and L.K. Wu, “Pad Characterization for CMOS Technology Using Time Domain Reflectometry”, in 2008 IEEE International RF and Microwave Conference, Kuala Lumpur, Malaysia, Dec. 2008.
  18. W.L. Chen, S.F. Chang, K.M. Chen, K.H. Liao, G.W. Huang, and J.C. Chang, “A Hybrid OPEN Model Technique for Accurate Device Characterization”, in 2008 IEEE International RF and Microwave Conference, Kuala Lumpur, Malaysia, Dec. 2008.
  19. S.C. Wang, P. Su, K.M. Chen, S.Y. Huang, C.C. Hung, V. Liang, C.Y. Tseng and G.W. Huang, “RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs”, in 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan, Sep. 2008.
  20. Y.T. Chen, K.M. Chen, W.S. Liao, G.W. Huang, and F.S. Yeh, “Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiNx Stressing Layer”, in 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan, Sep. 2008.
  21. C.S. Chiu, G.C. Chang, C.L. Gu, K.M. Peng, Erik S. Jeng, W.L. Chen, G.W. Huang, and L.K. Wu, “Implementation of Surface Acoustic Wave Vapor Sensor Using CMOS Amplifier”, in 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan, Sep. 2008.
  22. S.Y. Huang, C.C. Hung, V. Liang, W.S. Liao, T.L. Li, J.H. Li, C.Y. Tzeng, G.W. Huang, and K.M. Chen, “Novel Pseudo-Drain (PD) RF Power Cell in 0.13 um CMOS Technology”, in 2008 IEEE RFIC Symposium, Atlanta, Georgia, U.S.A., pp. 259-262, Jun. 2008.
  23. H.H. Hu, K.M. Chen, G. W. Huang, C.Y. Chang, Y.C. Lu, Y.C. Yang, and E. Cheng, “Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors,” in International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, Sep. 2007.
  24. S.Y. Huang, K.M. Chen, and G. W. Huang, C.Y. Chang, C.C. Hung, V. Liang, and B.Y. Chen, “Design for Integration of RF Power Transistors in 0.13 m Advanced CMOS Technology”, in 2007 IEEE MTT-S International Microwave Symposium, Honolulu, Hawaii, U.S.A., pp. 323-326, Jun. 2007.
  25. H.H. Hu, K.M. Chen, G.W. Huang, C.Y. Chang, Y.C. Lu, Y.C. Yang, and E. Cheng, “Characterization of RF LDMOS Transistors with Different Layout Structures,” in 2006 International Conference on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, Sep. 2006.
  26. S.D. Wu, G.W. Huang, K.M. Chen, and K.H. Liao, ”Modeling the substrate effect of RF MOSFET’s based on 4-port measurement,” in 67th ARFTG Conference, San Francisco, CA, U.S.A., Jun. 2006.
  27. S.Y. Huang, K.M. Chen, G.W. Huang, D.Y. Yang, C.Y. Chang, 2006, “Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown,” in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, U.S.A., Jan. 2006.
  28. H.Y. Chen, K.M. Chen, G.W. Huang, and C.Y. Chang, “An Analysis of Base Current Effect on the Anomalous Dip of Scattering Parameter S12 in SiGe HBTs”, in 2005 Asia-Pacific Microwave Conference, Suzhou, China, pp. 1082-1084, Dec. 2005.
  29. K.M. Chen, D.Y. Yang, S.Y. Huang, G.W. Huang, L.H. Chang, V. Liang, H.C. Tseng, and C.Y. Chang, “Effects of Hot Carrier Stress and Oxide Breakdown on RF Characteristics of MOSFETs”, in 2005 Asia-Pacific Microwave Conference, Suzhou, China, pp. 1039-1042, Dec. 2005.
  30. L.H. Chang , K.M. Chen, G.W. Huang, H.C. Tseng and V. Liang, “Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages,” in International Conference on Solid State Devices and Materials (SSDM 2005),, Hyogo, Japan, Sep. 2005.
  31. S.Y. Huang, K.M. Chen, G.W. Huang, D.Y. Yang, C.Y. Chang, V. Liang, and H.C. Tseng, “Impact of Hot Carrier Stress on RF Power Characteristics of MOSFET,” in 2005 IEEE MTT-S International Microwave Symposium, Long Beach, U.S.A., Jun. 2005.
  32. M.H. Cho, G.W. Huang, C.S. Chiu, and K.M. Chen, “Unified Parasitic De-Embedding Methodology of On-Wafer Multi-Port Device Characterization,” in 2005 IEEE MTT-S International Microwave Symposium, Long Beach, U.S.A., Jun. 2005.
  33. C.S. Chiu, G.W. Huang, D.Y. Chiu, K.M. Chen, M.H. Cho, and S.C. Wang, “A Novel Process-Controlled-Monitor Structure Suitable for RF CMOS Characterization,” in 2005 IEEE MTT-S International Microwave Symposium, Long Beach, U.S.A., Jun. 2005.
  34. M. H. Cho, C. S. Chiu, G. W. Huang, Y. M. Teng, L. H. Chang, K. M. Chen, and W. L. Chen, “A Fully-Scalable De-Embedding Method for On-Wafer S-Parameter Characterization of CMOS RF/Microwave Devices,” in 2005 IEEE RFIC Symposium, Long Beach, U.S.A., Jun. 2005.
  35. H.Y. Chen, K.M. Chen, G.W. Huang, M.H. Cho, and C.Y. Chang, “Computation of Noise Parameters Using Genetic Algorithms,” in 34th European Microwave Conference, Amsterdam, Netherlands, pp. 789–792, Oct. 2004.
  36. M.H. Cho, G.W. Huang, K.M. Chen, A.S. Peng, C.S. Chiu, Y.M. Teng, and H.Y. Chen, “A Novel De-embedding Technique for On-Wafer Microwave Characterization,” in 34th European Microwave Conference, Amsterdam, Netherlands, pp. 917–920, Oct. 2004.
  37. K.M. Chen, H.H. Hu, G.W. Huang, and C.Y. Chang, “Degradation of low-frequency noise in PD SOI MOSFETs after hot-carrier stress,” in 2004 International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, Sep. 2004.
  38. M.H. Cho, G.W. Huang, C.S. Chiu, K.M. Chen, and A.S. Peng, “Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs,” in 2004 International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, Sep. 2004.
  39. A.S. Peng, K.M. Chen, G.W. Huang, M.H. Cho, S.C. Wang, Y.M. Deng, H.C. Tseng, and T.L. Hsu, “Temperature Effect on Power Characteristics of SiGe HBTs”, in 2004 IEEE International Microwave Symposium, Fort Worth, U.S.A., p. 1955-1958, Jun. 2004.
  40. M.H. Cho, G.W. Huang, K.M. Chen, and A.S. Peng, “A Novel Cascade-Based De-embedding Method for On-Wafer Microwave Characterization and Automatic Measurement”, in 2004 IEEE International Microwave Symposium, Fort Worth, U.S.A., p. 1237-1240, Jun. 2004.
  41. K.M. Chen and G.W. Huang, “Flicker Noise Characterization of Co-silicide/SiGe Contacts Using TLM Test Structures, ” in 2004 IEEE International Conference on Microelectronic Test Structures, Awaji, Japan, Mar. 2004.
  42. S.C. Wang, G.W. Huang, K.M. Chen., H.C. Tseng, and T.L. Hsu, “A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model”, in 2004 Workshop on Compact Modeling, Boston, U.S.A., Mar. 2004.
  43. A.S. Peng, K.M. Chen, G.W. Huang, H.Y. Chen, and C.Y. Chang, “Characterization and modeling of silicon tapered inductors”, in 2004 Workshop on Compact Modeling, Boston, U.S.A., Mar. 2004.
  44. S.C. Wang, G.W. Huang, S.D. Wu, K.M. Chen, A.S. Peng, M.H. Cho, H.C. Tseng, and T.L. Hsu, “Temperature Effects on the Performance of 4-Port Transformers” in 2003 International Semiconductor Device Research Symposium, Washington, D.C., U.S.A., pp.190-191, Dec. 2003.
  45. M.H. Cho, G.W. Huang, K.M. Chen, H.C. Tseng, and T.L. Hsu, “Slow-Wave Characteristics of Interconnects on Silicon Substrates”, in 2003 International Semiconductor Device Research Symposium, Washington, D.C., U.S.A., pp.188-189, Dec. 2003.
  46. K.M. Chen, W.K. Yeh, G.W. Huang, Y.K. Fang, and F.L. Yang, “Characterization and Modeling of SOI Varactors at Various Temperatures,” in The 15th International Conference on Microelectronics, Cairo, Egypt, Dec. 2003.
  47. S.D. Wu, G.W. Huang, S.Y. Wu, L.P. Chen, and C.Y. Chang, “Characterization of 2-port Configuration MOSFET’s Amplifiers by 4-port Measurement,” in 2003 Asia-Pacific Microwave Conference, Seoul, Korea, pp.1431-1433, Nov. 2003.
  48. K.M. Chen, G.W. Huang, L.H. Chang H.C. Tseng, T.L. Hsu, H.Y. Chen, S.Y. Huang, and C.Y. Chang, “Dynamic Thermal Characteristics of SiGe HBTs with Various Emitter Geometries,” in 2003 Asia-Pacific Microwave Conference, Seoul, Korea, pp.510-513, Nov. 2003.
  49. K.M. Chen, G.W. Huang, L.H. Chang H.C. Tseng, T.L. Hsu, H.Y. Chen, S.Y. Huang, H.H. Hu and C.Y. Chang, “High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors Under Pulsed-Mode Operation,” in 2003 Asia-Pacific Microwave Conference, Seoul, Korea, pp.460-463, Nov. 2003.
  50. G.W. Huang, A.S. Peng, K.M. Chen, and L.H. Chang, “Dynamic Thermal Characterization and Modeling of Silicon Bipolar Junction Transistors using Pulsed RF Measurement System,” in 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, pp.666-667, Sep. 2003.
  51. K.M. Chen, H.H. Hu, G.W. Huang, S.Y. Huang, A.S. Peng, W.K. Yeh, and C.Y. Chang, 2003, September, “Low-Frequency Noise in Partially-Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures,” in 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, pp.634-635, Sep. 2003.
  52. M.H. Cho, G.W. Huang, K.M. Chen, S.Y. Wen, and S.C. Wang, “Improved Modeling Technique for On-Chip Silicon Spiral Inductors,” in 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, pp.448-449, Sep. 2003.
  53. S.C. Wang, G.W. Huang, S.D. Wu, A.S. Peng, and M.H. Cho, “Monolithic Transformer Modeling Based on the 4-port Characterization Technique,” in 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, pp.446-447, Sep. 2003.
  54. G.W. Huang, D.Y. Chiu, K.M. Chen, Y.M. Deng and S.C. Wang, “An Automatic Program suitable for On-Wafer Characterization and Statistic Analysis of Microwave Devices”, in 61th ARFTG Conference, Philadelphia, U.S.A., pp.157-161, Jun. 2003.
  55. G.W. Huang, D.Y. Chiu, and K.M. Chen, “An Automatic Macro Program developed for Characterization, Parameter Extraction and Statistic Analysis of Spiral Inductors”, in 2003 Workshop on Compact Modeling, San Francisco, U.S.A., Feb. 2003.
  56. G.W. Huang, K.M. Chen, J.F. Kuan, D.Y. Chiu, S.Y. Wen, Y.M. Teng, S.C. Wang, M.H. Cho, A.S. Peng, L.H. Chang, and J. Liu, “Improved Three-Step Noise Parameter De-embedding Method Applied in Silicon On-Wafer RF Test-Structures” in 2002 Asia-Pasific Microwave Conference, Kyoto, Japan, p.458-461, Nov. 2002.
  57. K.M. Chen, G.W. Huang, D. Y. Chiu, H.J. Huang, and C.Y. Chang, “Analysis of Low Frequency Noise in Co-Salicided Poly-Si and Poly-SiGe Resistors” in 2002 Asia-Pasific Microwave Conference, Kyoto, Japan, p.579-581, Nov. 2002.
  58. K.M. Chen, G.W. Huang, J.F. Kuan, T.H. Yang, H.J. Huang and C.Y. Chang, “Low Frequency Noise in Boron Doped Poly-SiGe Resistors”, in 2002 IEEE International Microwave Symposium, Seattle, U.S.A., p.405-408, Jun. 2002.
  59. H. T. Lue, T. Y. Tseng, and G. W. Huang, “A Novel Method to Characterize the Dielectric and Interfacial Properties of Ba0.5Sr0.5TiO3(BST)/Si by Microwave Measurement”, in 2002 IEEE International Conference on Microelectronic Test Structures, Cork, Ireland, p.101-106, Apr. 2002.
  60. K.M. Chen, H.J. Huang, G.W. Huang, T.S. Chao, Y.H. Pai, and C.Y. Chang, “High-Frequency Characteristics of PMOS Transistors with Raised SiGe Source/Drain,” in 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Michigan, U.S.A., p.92-95, Sep. 2001.
  61. L.P. Chen, B.M. Tseng, G.W. Huang, D.C. Lin, Y.P. Ho, H.Y. Lee, J.F. Kuan, Y.S. Chen, W.Y. Wen, T.L. Chen, P. Liou, H.F. Hsu, C.T. Hou, K.A. Wen and C.Y. Chang, “A Novel Method for Extracting Parasitic Parameters of Silicon Spiral Inductor”, in 1998 Asia-Pacific Microwave Conference, pp.581-584, Japan, Dec. 1998.
  62. L.P. Chen, Y.P. Ho, D.C. Lin, B.M. Tseng, H.Y. Lee, R.F. Guan, G.W. Huang, Y.C. Chen, W.Y. Wen and C.L. Chen, “Extraction of Parasitic Parameters of Dummy Devices on Different Silicon Substrates”, in 1998 IEEE RFIC Symposium, pp.321-324, U.S.A., Jun. 1998.

Patents
  1. "磊晶基極雙載子電晶體之製造方法",中華民國發明專利第117526號
  2. "用於射頻與直流量測的元件監視器",中華民國發明專利第228597號
  3. "可調式傳輸零點之低雜訊高增益主動式濾波器",中華民國發明專利第329984號
  4. "壓控變頻震盪器電路",中華民國發明專利第535189號
  5. "用於功能性驗證之檢測裝置",中華民國發明專利第548885號
  6. "展頻時脈產生器與展頻時脈信號產生方法",中華民國發明專利第552532號
  7. "Device Monitor for RF and DC Measurement", US7126359B2
  8. "Spread Spectrum Clock Generator and Method for Generating Spread Spectrum Clock Signal", US 9191128B2
  9. "Detector Device for Functional Certification", US9442161B2